Sona Chand Adhikari’s Thesis

This thesis focuses on two aspects of the novel amorphous oxide semiconductor InGaO3(ZnO)m (abbreviated as IGZO):
i. preparation of target for pulsed laser deposition and
ii. deposition of thin films from the target thus prepared and analysing the electronic properties of the thin films.
With the growth in the field of flat panel display technology, one of the major challenges is to fabricate thin film transistor (TFT) with higher carrier mobility. Amorphous hydrogenated silicon (a-Si:H) has been the workhorse for active matrix liquid crystal display.

With the advent of organic light emitting diode (OLED), which unlike the liquid crystal, is current driven and hence, the low mobility of a-Si:H (~1 cm2/Vs) would become a serious bottleneck in realizing active matrix OLED display. IGZO which has a higher mobility (≥ 10 cm2/Vs) is a potential candidate for the backplane TFTs of active matrix OLED displays. First, we focussed on the preparation of the target. Thin film deposition by pulsed laser deposition and sputtering requires a dense target with appropriate chemical compositions.

The second part of our work focuses on preparation and characterisation of thin films deposited from the prepared target through pulsed laser deposition technique.